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The DACO SiC MOSFET delivers ultra-low on-state resistance of 25mΩ, fast switching capability, and robust thermal performance in a compact Toll-8 package. Designed for high-frequency, high-efficiency power systems, it offers significant advantages over conventional Silicon devices — lower switching losses, higher thermal tolerance, and a simpler gate drive requirement. Whether you are designing for EV charging, server power, or industrial DC-DC conversion, this SiC MOSFET delivers the performance and reliability your application demands.
✅ 650V Blocking Voltage with Low R DS(on) of 25mΩ – high voltage capability combined with ultra-low conduction resistance, directly reducing power dissipation and improving overall system efficiency.
✅ Simple -4V/+15V Gate Drive – compatible with standard SiC gate drivers, reducing design complexity and BOM cost without the need for specialised circuitry.
✅ High-Speed Switching with Low Capacitance – C iss of 2500pF and C rss of just 8pF enable fast, clean switching transitions for high-frequency power conversion designs.
✅ Robust Body Diode with Low Q rr – reverse recovery charge of 240nC and recovery time of 56ns, making it well-suited for hard-switching topologies such as full-bridge and totem-pole PFC converters.
✅ Avalanche Tested — 1200mJ Rated – 100% avalanche tested with a single-pulse energy rating of 1200mJ, ensuring reliable protection against inductive load transients in real-world applications.
The DAC025N065LZ3 is suitable for a wide range of high-power applications, including:
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Compact, high-efficiency, and built for demanding power applications, the DACO SiC MOSFET delivers consistent performance under high voltage, high current, and extreme thermal conditions — making it the ideal choice for EV charging, server power, energy storage, and high-frequency power conversion designs.
